utc 2SC2482 npn epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r211-015,a npn epitaxial planar transistor applications *high voltage switching and amplifier applications *color tv horiz. driver applications *color tv chroma output applications features *high voltage :v(br)ceo= 300v *small collector output capacitance: cob=3.0pf(typ.) to-92nl 1 1:emitter 2:collector 3:base absolute maximum ratings ( ta=25 c ) parameter symbol limits unit collector-base voltage v cbo 300 v collector-emitter voltage v ceo 300 v emitter-base voltage v ebo 7 v collector current ic 100 ma base current i b 50 ma collector power dissipation pc 900 mw junction temperature t j 150 c storage temperature t stg -55 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =240v i e = 0 1.0 a emitter cut-off current i ebo v eb = 7v ic=0 1.0 a h fe(1) v ce =10v,ic=4ma 20 dc current gain h fe(2) v ce =10v,ic=20ma 30 150 collector-emitter saturation voltage v ce (sat) ic=10ma,i b =1ma 1.0 v base- emitter saturation voltage v be (sat) ic=10ma,i b =1ma 1.0 v transition frequency f t v ce =10v, ic=20ma 50 mhz collector output capacitance cob v cb =20v, i e = 0, f=1mhz 3.0 pf
utc 2SC2482 npn epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r211-015,a electrical characteristics curves ic-v ce collector -emitter voltage vc e (v) collector curr ent ic (m a) 04 812 0 20 40 60 80 20 100 16 hfe - ic collector current ic (ma) 0.3 1 3 10 30 50 10 100 300 30 500 i b =0.2ma 1 2 3 0.4 dc current gain hfe ta=25 24 120 0.6 4 6 ta=100 c ommon emi tter ta=25 100 ta=-25 hfe - ic collector current ic (ma) 0.3 1 3 10 30 50 10 100 300 30 500 dc current gain hfe 100 c ommon emi tter ta=25 c ommon emi tter v ce =10v v ce =20v v ce =10v v ce =5v collector current ic (ma) 0.3 1 3 0.05 0.1 0.3 10 1 3 30 5 collector-emiitter saturation voltage v ce (sat)(v) 100 c ommon emi tter ta=25 i c /i b =10 v ce (sat)-ic 5 2 collector current ic (ma) 0.3 1 3 10 30 collector-emiitter saturation voltage v ce (sat)(v) 100 common emitter i c /i b =5 v ce (sat)-ic 0.5 0.05 0.1 0.3 1 3 5 0.5 ta=25 ta=100 ta=-25 collector current ic (ma) 0.3 1 3 10 30 base-emitter saturation voltage v be (sat)(v) 100 c ommon emi tter ta=25 0.1 0.3 1 3 5 0.5 i c /i b =5 v be (sat)-ic
utc 2SC2482 npn epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r211-015,a ic-v be base -emitter voltag e v be (v) collector cur rent ic (m a) 0.2 0.4 0.6 0.8 0 20 40 60 1.0 80 common emitter v ce = 10 v cob-v cb collector-base voltag e v cb (v) 13 10 1 3 5 30 10 100 30 collector output capacitance cob(pf) 300 1.2 ta=-25 ta= 100 ta=25 50 i e =0 f=1mhz collector-emitter voltag e v ce (v) safe operating area collector current-ic(ma) pt=1s 30 3100 2 10 5 collector current ic(ma) 30 *sing le nonrepetitive pulse ta=25 10 300 50 100 300 1ms 10ms* 100ms* ic max.(pulsed)* i c max. (co ni nuo us) ta=25 curves must be derated linearly with increase in temperature dc operation 100 ft -ic collector current ic (ma) 0.3 1 3 10 30 50 10 100 300 30 500 transition fr equency ft(m hz) 100 common emitter ta=25 v ce = 20v v ce = 10v v ce =5v ta=25 500ms* 30 s* v ceo max utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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